40 citations · 63 across the 6 of their papers we have counts for
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Optical spectroscopy of single beryllium acceptors in GaAs/AlGaAs quantum well
P. V. Petrov, I. A. Kokurin, G. V. Klimko +5
We carry out microphotoluminescence measurements of an acceptor-bound exciton (A^0X) recombination in the applied magnetic field with a single impurity resolution. In order to desc…
Optical orientation of spins in GaAs:Mn/AlGaAs quantum wells via impurity-to-band excitation
P. V. Petrov, I. A. Kokurin, Yu. L. Ivanov +5
The paper reports optical orientation experiments performed in the narrow GaAs/AlGaAs quantum wells doped with Mn. We experimentally demonstrate a control over the spin polarizatio…
Influence of disordered edges on transport properties in graphene
D. Smirnov, G. Yu. Vasileva, J. C. Rode +4
The influence of plasma etched sample edges on electrical transport and doping is studied. Through electrical transport measurements the overall doping and mobility are analyzed fo…
Linear magnetoresistance in compensated graphene bilayer
G. Yu. Vasileva, D. Smirnov, Yu. L. Ivanov +8
We report a nonsaturating linear magnetoresistance in charge-compensated bilayer graphene in a temperature range from 1.5 to 150 K. The observed linear magnetoresistance disappears…
Magnetoresistance of monolayer graphene with short-range scattering
G. Yu. Vasileva, P. S. Alekseev, Yu. B. Vasilyev +4
We present magnetotransport measurements at classical magnetic fields for three graphene monolayers with various levels of disorder. A square root magnetoresistance (SRMR) behavior…
Photoluminescence and transport in selectively doped p-GaAs/AlGaAs quantum wells: manifestation of the upper Hubbard band
N. V. Agrinskaya, Yu. L. Ivanov, P. V. Petrov +1
By selective doping (Be) of the well and barrier regions of p-GaAs/AlGaAs structures we have realized the situation where the upper Hubbard band (A+ centers) has been occupied by h…