activity
20152023
most citedDirect Evidence of Mg Incorporation Pathway in Vapor-Liquid-Solid Grown p-type Nonpolar GaN Nanowires

23 citations · 93 across the 7 of their papers we have counts for

collaborators

7 papers

cond-mat.supr-con2023

Studies on the proximity effect in Bi-based high-temperature superconductor/manganite heterostructures

V. Gayathri, E. P. Amaladass, A. T. Sathyanarayana +5

The effect of proximity of the magnetism of the Pr-based manganite (Pr0.6Sr0.4MnO3) on the superconductivity of Bi-based high-temperature superconductor (Bi1.75Pb0.25Sr2Ca2Cu3O10+d…

physics.app-ph2018★ 12 cited

Spectroscopically forbidden infra-red emission in Au-vertical graphene hybrid nanostructures

A. K. Sivadasan, Santanu Parida, Subrata Ghosh +2

Implementation of Au nanoparticles (NPs) is a subject for frontier plasmonic research due to its fascinating optical properties. Herein, the present study deals with plasmonic assi…

cond-mat.mtrl-sci2017★ 21 cited

VO2 microcrystals as advanced smart window material at semiconductor to metal transition

Raktima Basu, P. Magudapathy, Manas Sardar +2

Textured VO2(011) microcrystals are grown in the monoclinic, M1 phase which undergo a reversible first order semiconductor to metal transition (SMT) accompanied by a structural pha…

cond-mat.mtrl-sci2017★ 6 cited

Optical properties of AlGaN nanowires synthesized via ion beam techniques

Santanu Parida, P. Magudapathy, A. K. Sivadasan +2

AlGaN plays a vital role in hetero-structure high electron mobility transistor by employing a two-dimensional electron gas and as electron blocking layer in the multi quantum well…

cond-mat.mtrl-sci2016★ 9 cited

Nonpolar p-GaN/n-Si heterojunction diode characteristics: A comparison between ensemble and single nanowire devices

Avinash Patsha, Ramanathaswamy Pandian, Sandip Dhara +1

The electrical and photodiode characteristics of ensemble and single p-GaN nanowire and n-Si heterojunction devices were studied. Ideality factor of the single nanowire p-GaN/n-Si…

cond-mat.mtrl-sci2015★ 23 cited

Direct Evidence of Mg Incorporation Pathway in Vapor-Liquid-Solid Grown p-type Nonpolar GaN Nanowires

Avinash Patsha, S. Amirthapandian, Ramanathaswamy Pandian +3

Doping of III-nitride based compound semiconductor nanowires is still a challenging issue to have a control over the dopant distribution in precise locations of the nanowire optoel…

physics.chem-ph2015★ 22 cited

Influence of oxygen in architecting large scale nonpolar GaN nanowires

Avinash Patsha, S. Amirthapandian, Ramanathaswamy Pandian +1

Manipulation of surface architecture of semiconducting nanowires with a control in surface polarity is one of the important objectives for nanowire based electronic and optoelectro…