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20152020
most citedLocalized Charge Transfer Process and Surface Band Bending in Methane Sensing by GaN Nanowires

39 citations · 153 across the 9 of their papers we have counts for

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Showing cond-mat.mtrl-sciShow all

8 papers · 1 filter

cond-mat.mtrl-sci2017★ 16 cited

Spectroscopic investigation of native defects induced electron-phonon coupling in GaN nanowires

Santanu Parida, Avinash Patsha, Santanu Bera +1

The integration of advanced optoelectronic properties in nanoscale devices of group III nitride can be realized by understanding the coupling of charge carriers with optical excita…

cond-mat.mtrl-sci2017★ 20 cited

Probing Localized Surface Plasmons of Trisoctahedral Gold Nanocrystals for Surface Enhanced Raman Scattering

Achyut Maity, Arpan Maiti, Biswarup Satpati +3

Trisoctahedral (TOH) shaped Au nanocrystals (NCs) have emerged as a new class of metal nanoparticles (MNP) due to its superior catalystic and SERS activities caused by the presence…

cond-mat.mtrl-sci2017★ 11 cited

Effect of Scattering Efficiency in the Tip Enhanced Raman Spectroscopic Imaging of Nanostructures in the Sub Diffraction Limit

A. K. Sivadasan, Avinash Patsha, Achyut Maity +2

The experimental limitations in the signal enhancement and spatial resolution in spectroscopic imaging have been always a challenging task in the application of near-field spectros…

cond-mat.mtrl-sci2016★ 39 cited

Localized Charge Transfer Process and Surface Band Bending in Methane Sensing by GaN Nanowires

A. Patsha, P. Sahoo, S. Amirthapandian +5

The physicochemical processes at the surfaces of semiconductor nanostructures involved in electrochemical and sensing devices are strongly influenced by the presence of intrinsic o…

cond-mat.mtrl-sci2016★ 9 cited

Nonpolar p-GaN/n-Si heterojunction diode characteristics: A comparison between ensemble and single nanowire devices

Avinash Patsha, Ramanathaswamy Pandian, Sandip Dhara +1

The electrical and photodiode characteristics of ensemble and single p-GaN nanowire and n-Si heterojunction devices were studied. Ideality factor of the single nanowire p-GaN/n-Si…

cond-mat.mtrl-sci2016★ 12 cited

Optically confined polarized resonance Raman studies in identifying crystalline orientation of sub-diffraction limited AlGaN nanostructure

A. K. Sivadasan, Avinash Patsha, Sandip Dhara

An optical characterization tool of Raman spectroscopy with extremely weak scattering cross section tool is not popular to analyze scattered signal from a single nanostructure in t…

cond-mat.mtrl-sci2015

Optical Properties of Mono-Dispersed AlGaN Nanowires in the Single-Prong Growth Mechanism

A. K. Sivadasan, Avinash Patsha, S. Polaki +5

Growth of mono-dispersed AlGaN nanowires of ternary wurtzite phase is reported using chemical vapour deposition technique in the vapour-liquid-solid process. The role of distributi…

cond-mat.mtrl-sci2015★ 23 cited

Direct Evidence of Mg Incorporation Pathway in Vapor-Liquid-Solid Grown p-type Nonpolar GaN Nanowires

Avinash Patsha, S. Amirthapandian, Ramanathaswamy Pandian +3

Doping of III-nitride based compound semiconductor nanowires is still a challenging issue to have a control over the dopant distribution in precise locations of the nanowire optoel…