activity
20142023
most citedObservation of huge thermal spin currents in magnetic multilayers

95 citations · 255 across the 10 of their papers we have counts for

collaborators

10 papers

cond-mat.mes-hall2023

A Perspective on Ferrons

G. E. W. Bauer, P. Tang, R. Iguchi +7

The duality between electric and magnetic dipoles in electromagnetism only partly applies to condensed matter. In particular, the elementary excitations of the magnetic and ferroel…

cond-mat.mes-hall2022★ 3 cited

Quantized thermoelectric Hall plateau in the quantum limit of graphite as a nodal line semimetal

Andhika Kiswandhi, Tomotaka Ochi, Toshihiro Taen +3

We performed thermoelectric Hall conductivity measurements on single-crystal graphite in the quantum limit up to 13 T. Both electrical and thermoelectric transport measure…

cond-mat.mes-hall2022★ 4 cited

Weak localization on moiré superlattice in twisted double bilayer graphene

Masaki Kashiwagi, Toshihiro Taen, Kazuhito Uchida +3

Moiré superlattice created by twist stacking has multiple physical properties. These physical properties depend on the twist angle, hence investigation of the twist angle dependenc…

cond-mat.mtrl-sci2019★ 33 cited

Highly anisotropic interlayer magnetoresistance in ZrSiS nodal-line Dirac semimetal

M. Novak, S. N. Zhang, F. Orbanic +11

We instigate the angle-dependent magnetoresistance (AMR) of the layered nodal-line Dirac semimetal ZrSiS for the in-plane and out-of-plane current directions. This material has rec…

cond-mat.str-el2018★ 9 cited

Anisotropy of Dirac cones and van Hove singularity in an organic Dirac fermion system

Ayaka Mori, Mitsuyuki Sato, Takeshi Yajima +3

We propose an experimental method to examine the in-plane anisotropy of electronic structure in layered conductors. In the method, we measure the interlayer magnetoresistance as a…

cond-mat.mes-hall2018★ 6 cited

Double carrier transport in electron doped region in black phosphorus FET

Kohei Hirose, Toshihito Osada, Kazuhito Uchida +4

The double carrier transport has been observed in thin film black phosphorus (BP) field effect transistor (FET) devices in highly electron doped region. BP thin films with typical…