2 papers
cond-mat.mtrl-sci2016
Resistive Switching Phenomena of HfO2 Films Grown by MOCVD for Resistive Switching Memory Devices
Min Ju Yun, Sungho Kim, Hee-Dong Kim
The resistive switching phenomena of HfO2 films grown by metalorganic chemical vapor deposition was studied for the application of ReRAM devices. In the fabricated Pt/HfO2/TiN memo…
cond-mat.mtrl-sci2016
Resistive Switching Characteristics of Al/Si3N4/p-Si MIS-Based Resistive Switching Memory Devices
Min Ju Yun, Sungho Kim, Hee-Dong Kim
In this study, we proposed and demonstrated a self-rectifying property of silicon nitride (Si3N4)-based resistive random access memory device by employing p-type silicon (p-Si) as…