activity
20042023
most citedQuasiparticle energies for large molecules: a tight-binding GW approach

55 citations · 103 across the 9 of their papers we have counts for

collaborators

9 papers

cond-mat.mtrl-sci2023

Matching the photocurrent of perovskite/organic tandem solar modules by varying the cell width

Jose Garcia Cerrillo, Andreas Distler, Fabio Matteocci +12

Photocurrent matching in conventional monolithic tandem solar cells is achieved by choosing semiconductors with complementary absorption spectra and by carefully adjusting the opti…

physics.app-ph2021★ 3 cited

Practical development of efficient thermoelectric-photovoltaic hybrid systems based on wide-gap solar cells

Bruno Lorenzi, Paolo Mariani, Andrea Reale +3

The decrease of solar cell efficiency with temperature is a known problem for photovoltaics (PV). Temperature sensitivity can lead to a considerable amount of energy losses over th…

physics.app-ph2020★ 8 cited

Photoluminescence of MAPbI: a semiconductor science and technology point of view

Valerio Campanari, Antonio Agresti, Sara Pescetelli +6

In this work, we perform steady-state continuous wave (cw) photoluminescence (PL) measurements on a MAPbI thin film in the temperature range of 10-160 K, using excitation densi…

cond-mat.stat-mech2016

Large deviation theory to model systems under an external feedback

Alessio Gagliardi, Alessandro Pecchia, Aldo Di Carlo

In this paper we address the problem of systems under an external feedback. This is performed using a large deviation approach and rate distortion from information theory. In parti…

cond-mat.mes-hall2005

DFT modelling of bulk-modulated carbon nanotube field-effect transistors

L. Latessa, A. Pecchia, A. Di Carlo

We report density-functional theory (DFT), atomistic simulations of the non-equilibrium transport properties of carbon nanotube (CNT) field-effect transistors (FETs). Results have…

cond-mat.other2005

Scaling issues for AlGaN/GaN HEMTs: performance optimization via devices geometry modelling

S. Russo, A. Di Carlo

The potential barrier between source and gate in HEMTs and between source and channel in MOSFET controls the current output and the velocity injection of electrons in the channel […