122 citations · 440 across the 13 of their papers we have counts for
15 papers
Robust valley polarization of helium ion modified atomically thin MoS
Julian Klein, Agnieszka Kuc, Anna Nolinder +8
Atomically thin semiconductors have dimensions that are commensurate with critical feature sizes of future optoelectronic devices defined using electron/ion beam lithography. Robus…
Graphenic Carbon-Silicon Contacts for Reliability Improvement of Metal-Silicon Junctions
Max Stelzer, Franz Kreupl
Contact resistance and thermal degradation of metal-silicon contacts are challenges in nanoscale CMOS as well as in power device applications. Titanium silicide (TiSi) contacts are…
Performance Improvement of Graphenic Carbon X-ray Transmission Windows
Sebastian Huebner, Natsuki Miyakawa, Andreas Pahlke +1
Graphenic carbon (GC) x-ray transmission windows for EDX and XRF applications with a high transparency for x-rays below 2.5 keV have been fabricated on 6 inch wafers with a CMOS-co…
Design and properties of low energy x-ray transmission windows based on graphenic carbon
Sebastian Huebner, Natsuki Miyakawa, Andreas Pahlke +1
X-ray transmission windows for the low energy range, especially between 0.1 keV and 1 keV have been designed and fabricated based on graphenic carbon (GC) with an integrated silico…
High Performance X-Ray Transmission Windows Based on Graphenic Carbon
Sebastian Huebner, Natsuki Miyakawa, Stefan Kapser +2
A novel x-ray transmission window based on graphenic carbon has been developed with superior performance compared to beryllium transmission windows that are currently used in the f…
Carbon Memory Assessment
Franz Kreupl
The geometrical and performance scaling of silicon CMOS integrated circuit technology over the past 50 years has enabled many affordable new products for business and consumer appl…