A. Khanna

most citedReaction-Drift Model for Switching Transients in Pr

_{0.7}

_{0.3}

MnO

_{3}

-Based Resistive RAM

16 citations · 26 across the 3 of their papers we have counts for

collaborators

3 papers

physics.app-ph2020★ 16 cited

Reaction-Drift Model for Switching Transients in Pr $_{0.7}$ Ca $_{0.3}$ MnO $_{3}$ -Based Resistive RAM

Vivek Saraswat, Shankar Prasad, Abhishek Khanna +5

Pr $_{0.7}$ Ca $_{0.3}$ MnO $_{3}$ (PCMO) based RRAM shows promising memory properties like non-volatility, low variability, multiple resistance states and scalability. From a modeling pe…

cond-mat.mtrl-sci2016★ 1 cited

Reaction-Drift Model for Switching Transients in Pr $_{0.7}$ Ca $_{0.3}$ MnO $_{3}$ Based Resistive RAM

A. Khanna, S. Prasad, N. Panwar +1

Earlier, the DC hole-current modeling of PCMO RRAM by drift-diffusion (DD) including self-heating (SH) in TCAD (but without ionic transport) was able to explain the experimentally…

cond-mat.mtrl-sci2016★ 9 cited

Space Charge Limited Current with Self-heating in Pr $_{0.7}$ Ca $_{0.3}$ MnO $_{3}$ based RRAM

I. Chakraborty, N. Panwar, A. Khanna +1

Space Charge Limited Current (SCLC) based conduction has been identified for PCMO-based RRAM devices based on the observation that $I \propto V^{α}$ where $α \approx 2$ . A critical fe…

Reaction-Drift Model for Switching Transients in Pr0.7​Ca0.3​MnO3​-Based Resistive RAM

Reaction-Drift Model for Switching Transients in Pr0.7​Ca0.3​MnO3​ Based Resistive RAM

Space Charge Limited Current with Self-heating in Pr0.7​Ca0.3​MnO3​ based RRAM

Reaction-Drift Model for Switching Transients in Pr $_{0.7}$ Ca $_{0.3}$ MnO $_{3}$ -Based Resistive RAM

Reaction-Drift Model for Switching Transients in Pr $_{0.7}$ Ca $_{0.3}$ MnO $_{3}$ Based Resistive RAM

Space Charge Limited Current with Self-heating in Pr $_{0.7}$ Ca $_{0.3}$ MnO $_{3}$ based RRAM