30 citations · 87 across the 5 of their papers we have counts for
6 papers
Integration of external electric fields in molecular dynamics simulation models for resistive switching devices
Tobias Gergs, Sven Dirkmann, Thomas Mussenbrock
Resistive switching devices emerged a huge amount of interest as promising candidates for non-volatile memories as well as artificial synapses due to their memristive behavior. The…
In depth nano spectroscopic analysis on homogeneously switching double barrier memristive devices
Julian Strobel, Mirko Hansen, Sven Dirkmann +10
Memristors based on a double barrier design have been analysed by various nano spectroscopic methods to unveil details about its microstructure and conduction mechanism. The device…
Resistive Switching in Memristive Electrochemical Metallization Devices
Sven Dirkmann, Thomas Mussenbrock
We report on resistive switching of memristive electrochemical metallization devices using 3D kinetic Monte Carlo simulations describing the transport of ions through a solid state…
An Enhanced Lumped Element Electrical Model of a Double Barrier Memristive Device
Enver Solan, Sven Dirkmann, Mirko Hansen +5
The massive parallel approach of neuromorphic circuits leads to effective methods for solving complex problems. It has turned out that resistive switching devices with a continuous…
The role of ion transport phenomena in memristive double barrier devices
Sven Dirkmann, Mirko Hansen, Martin Ziegler +2
In this work we report on the role of ion transport for the dynamic behavior of a double barrier quantum mechanical Al/AlO/NbO/Au memristive devic…
Kinetic Simulation of Filament Growth Dynamics in Memristive Electrochemical Metallization Devices
Sven Dirkmann, Martin Ziegler, Mirko Hansen +3
In this work we report on kinetic Monte-Carlo calculations of resistive switching and the underlying growth dynamics of filaments in an electrochemical metallization device consist…