2 papers
cond-mat.mtrl-sci2025
WSe2 p-MOSFETs with Nb-Doped WS2 Contacts Deposited using Atomic Layer Deposition
Shivanshu Mishra, Ruixue Li, Dongjea Seo +5
WSe2 p-MOSFETs with Nb-doped WS2 contacts formed using atomic layer deposition are demonstrated. The devices are fabricated using a technique that aligns the contact metallization…
cs.ET2025
Content Addressable Memory Design with Reference Resistor for Improved Search Resolution
Siri Narla, Steven J. Koester, Rebecca A. Dawley +3
Despite the parallel in-memory search capabilities of content addressable memories (CAMs), their use in applications is constrained by their limited resolution that worsens as they…