15 citations · 36 across the 3 of their papers we have counts for
Showing cond-mat.mes-hallShow all
3 papers · 1 filter
cond-mat.mes-hall2016★ 15 cited
Electronic structures of free-standing nanowires made from indirect bandgap semiconductor gallium phosphide
Gaohua Liao, Ning Luo, Ke-Qiu Chen +1
We present a theoretical study of the electronic structures of freestanding nanowires made from gallium phosphide (GaP)--a III-V semiconductor with an indirect bulk bandgap. We con…
cond-mat.mes-hall2015★ 6 cited
Electronic structures of [111]-oriented free-standing InAs and InP nanowires
Gaohua Liao, Ning Luo, Ke-Qiu Chen +1
We report on a theoretical study of the electronic structures of the [111]-oriented, free-standing, zincblende InAs and InP nanowires with hexagonal cross sections by means of an a…
cond-mat.mes-hall2015★ 15 cited
Electronic structures of [001]- and [111]-oriented InSb and GaSb free-standing nanowires
Gaohua Liao, Ning Luo, Zhihu Yang +2
We report on a theoretical study of the electronic structures of InSb and GaSb nanowires oriented along the [001] and [111] crystallographic directions. The nanowires are described…