21 citations · 68 across the 5 of their papers we have counts for
5 papers
Electronic structures of free-standing nanowires made from indirect bandgap semiconductor gallium phosphide
Gaohua Liao, Ning Luo, Ke-Qiu Chen +1
We present a theoretical study of the electronic structures of freestanding nanowires made from gallium phosphide (GaP)--a III-V semiconductor with an indirect bulk bandgap. We con…
Topological energy gaps in the [111]-oriented InAs/GaSb and GaSb/InAs core-shell nanowires
Ning Luo, Gaohua Liao, Lin-Hui Ye +1
The [111]-oriented InAs/GaSb and GaSb/InAs core-shell nanowires have been studied by the Luttinger-Kohn Hamiltonian to search for non-vanishing fu…
k.p theory of freestanding narrow band gap semiconductor nanowires
Ning Luo, Gaohua Liao, H. Q. Xu
We report on a theoretical study of the electronic structures of freestanding nanowires made from narrow band gap semiconductors GaSb, InSb and InAs. The nanowires are described by…
Electronic structures of [111]-oriented free-standing InAs and InP nanowires
Gaohua Liao, Ning Luo, Ke-Qiu Chen +1
We report on a theoretical study of the electronic structures of the [111]-oriented, free-standing, zincblende InAs and InP nanowires with hexagonal cross sections by means of an a…
Electronic structures of [001]- and [111]-oriented InSb and GaSb free-standing nanowires
Gaohua Liao, Ning Luo, Zhihu Yang +2
We report on a theoretical study of the electronic structures of InSb and GaSb nanowires oriented along the [001] and [111] crystallographic directions. The nanowires are described…