256 citations · 2.6k across the 56 of their papers we have counts for
Showing 2014 · cond-mat.mtrl-sciShow all
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cond-mat.mtrl-sci2014★ 24 cited
Shock-waves and commutation speed of memristors
Shao Tang, Federico Tesler, Fernando Gomez Marlasca +3
Progress of silicon based technology is nearing its physical limit, as minimum feature size of components is reaching a mere 10 nm. The resistive switching behaviour of transition…
cond-mat.mtrl-sci2014★ 11 cited
Resistive switching phenomena in TiOx nanoparticle layers for memory applications
Emanuelle Goren, Mariana Ungureanu, Raul Zazpe +5
Electrical characteristics of a Co/TiO_x/Co resistive memory device, fabricated by two different methods are reported. In addition to crystalline TiO_2 layers fabricated via conven…