119 citations · 336 across the 9 of their papers we have counts for
4 papers · 1 filter
Oxygen modulated quantum conductance for ultra-thin HfO-based memristive switching devices
Xiaoliang Zhong, Ivan Rungger, Peter Zapol +1
Memristive switching devices, candidates for resistive random access memory technology, have been shown to switch off through a progression of states with quantized conductance and…
Franck-Condon Blockade in a Single-Molecule Transistor
E. Burzurí, Y. Yamamoto, M. Warnock +4
We investigate vibron-assisted electron transport in single-molecule transistors containing an individual Fe4 Single-Molecule Magnet. We observe a strong suppression of the tunneli…
Quantum Monte Carlo analysis of a charge ordered insulating antiferromagnet: the TiO Magnéli phase
Anouar Benali, Luke Shulenburger, Jaron T. Krogel +3
The Magnéli phase TiO is an important transition metal oxide with a wide range of applications because of its interplay between charge, spin, and lattice degrees of freedom…
The effect of Ta oxygen scavenger layer on HfO-based resistive switching behavior: thermodynamic stability, electronic structure, and low-bias transport
X. Zhong, I. Rungger, P. Zapol +3
Reversible resistive switching between high-resistance and low-resistance states in metal-oxide-metal heterostructures makes them very interesting for applications in random access…