43 citations · 43 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2016★ 43 cited
MgGa2O4 spinel barrier for magnetic tunnel junctions: coherent tunneling and low barrier height
Hiroaki Sukegawa, Yushi Kato, Mohamed Belmoubarik +9
Epitaxial Fe/magnesium gallium spinel oxide (MgGa2O4)/Fe(001) magnetic tunnel junctions (MTJs) were fabricated by magnetron sputtering. Tunnel magnetoresistance (TMR) ratio up to 1…
cs.CR2016
High-Speed Magnetoresistive Random-Access Memory Random Number Generator Using Error-Correcting Code
Tetsufumi Tanamoto, Naoharu Shimomura, Sumio Ikegawa +3
A high-speed random number generator (RNG) circuit based on magnetoresistive random-access memory (MRAM) using an error-correcting code (ECC) post processing circuit is presented.…