Device-area selection of memristive transport regimes in epitaxial $H{f}_{0.5}Z{r}_{0.5}{O}_2$-based ferroelectric devices

Priscila A. Tapia Presas, Lautaro Galarregui, Wilson Román Acevedo +5

Ferroelectric memristive devices based on hafnia are promising systems for neuromorphic electronics, yet the interplay between polarization-modulated resistive changes and defect-m…