26 citations · 46 across the 7 of their papers we have counts for
5 papers · 1 filter
Device-area selection of memristive transport regimes in epitaxial -based ferroelectric devices
Priscila A. Tapia Presas, Lautaro Galarregui, Wilson Román Acevedo +5
Ferroelectric memristive devices based on hafnia are promising systems for neuromorphic electronics, yet the interplay between polarization-modulated resistive changes and defect-m…
Coexistance of volatile and non-volatile memristive effects in phase-separated LaCaMnO-based devices
G. A. Ramírez, W. Román Acevedo, M. Rengifo +4
In this work, we have investigated the coexistance of volatile and non-volatile memristive effects in epitaxial phase-separated LaCaMnO thin fil…
Optimization of the multi-mem response of topotactic redox LaSrMnCoO
W. Román Acevedo, M. H. Aguirre, C. Ferreyra +6
Memristive systems emerge as strong candidates for the implementation of Resistive Random Access Memories (RRAM) and neuromorphic computing devices, as they can mimic the electrica…
Origin of multistate resistive switching in Ti/manganite/Si/Si heterostructures
W. Román Acevedo, C. Acha, M. J. Sánchez +2
We report on the growth and characterization of Ti/Mn/Si/n-Si memristive devices. We demonstrate that using current as electrical stimulus unveils an…
Manganite-based three level memristive devices with self-healing capability
W. Román Acevedo, D. Rubi, J. Lecourt +5
We report on non-volatile memory devices based on multifunctional manganites. The electric field induced resistive switching of Ti/Mn/n-Si devices is explo…