245 citations · 294 across the 3 of their papers we have counts for
8 papers
In situ investigation of conducting interface formation in LaAlO3/SrTiO3 heterostructure
Hyang Keun Yoo, Luca Moreschini, Aaron Bostwick +4
The high-mobility conducting interface (CI) between LaAlO_{3}(LAO) and SrTiO_{3}(STO) has revealed many fascinating phenomena, including exotic magnetism and superconductivity. But…
Enhanced tunability of two-dimensional electron gas on SrTiO3 through heterostructuring
Hyang Keun Yoo, Luca Moreschini, Andrew L. Walter +4
Two-dimensional electron gases (2DEGs) on the SrTiO3 (STO) surface or in STO-based heterostructures have exhibited many intriguing phenomena, which are strongly dependent on the 2D…
Visualizing Orbital Content of Electronic Bands in Anisotropic 2D Semiconducting ReSe
B. K. Choi, S. Ulstrup, S. M. Gunasekera +12
Many properties of layered materials change as they are thinned from their bulk forms down to single layers, with examples including indirect-to-direct band gap transition in 2H se…
Light-induced renormalization of the Dirac quasiparticles in the nodal-line semimetal ZrSiSe
G. Gatti, A. Crepaldi, M. Puppin +16
In nodal-line semimetals linearly dispersing states form Dirac loops in the reciprocal space, with high degree of electron-hole symmetry and almost-vanishing density of states near…
Tunable Electronic Structure in Gallium Chalcogenide van der Waals Compounds
Brian Shevitski, Søren Ulstrup, Roland J. Koch +8
Transition metal monochalcogenides comprise a class of two-dimensional materials with electronic band gaps that are highly sensitive to material thickness and chemical composition.…
Universal Mechanism of Band-Gap Engineering in Transition-Metal Dichalcogenides
Mingu Kang, Beomyoung Kim, Sae Hee Ryu +7
Two-dimensional (2D) van-der-Waals semiconductors have emerged as a class of materials with promising device characteristics owing to the intrinsic bandgap. For realistic applicati…