activity
20162026
most citedA non-volatile memory based on nonlinear magnetoelectric effects

74 citations · 157 across the 6 of their papers we have counts for

collaborators

7 papers

cond-mat.str-el2026

Phase-Coherent Spin and Lattice Modulations in a Y-type Hexaferrite

Oskar Stepančić, Annika Stellhorn, Emma Campillo +7

Spin-driven multiferroics owe their electric polarization to lattice distortions that follow the magnetic order, yet in incommensurate magnets symmetry normally forbids such a dist…

cond-mat.mtrl-sci2021★ 1 cited

Reentrance of spin-driven ferroelectricity through rotational tunneling of ammonium

Yan Wu, Lei Ding, Na Su +9

Quantum effects fundamentally engender exotic physical phenomena in macroscopic systems, which advance next-generation technological applications. Rotational tunneling that represe…

cond-mat.mtrl-sci2018★ 22 cited

Probe Skyrmion phases and dynamics in MnSi via the magnetoelectric effect in a composite configuration

Yisheng Chai, Peipei Lu, Haifeng Du +8

We have developed a sensitive technique to probe the magnetic skyrmion phases and dynamics by employing the interfacial coupling effect in a magnetoelectric composite configuration…

cond-mat.mtrl-sci2018★ 30 cited

Electromagnon in Y-type hexaferrite BaSrCoZnFeAlO

Jakub Vit, Filip Kadlec, Christelle Kadlec +5

We investigated static and dynamic magnetoelectric properties of single crystalline BaSrCoZnFeAlO which is a room-temperature multiferroic with Y-type hexaferrite cry…

cond-mat.mtrl-sci2016★ 30 cited

Electromagnon in the Z-type hexaferrite

Filip Kadlec, Christelle Kadlec, Jakub Vit +12

We studied experimentally the high-temperature magnetoelectric prepared as ceramics (x = 0, 0.2) and a single crystal (x = 0.5…

cond-mat.mtrl-sci2016

A multilevel nonvolatile magnetoelectric memory based on memtranstor

Jianxin Shen, Junzhuang Cong, Dashan Shang +4

The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices.…

cond-mat.mtrl-sci2016★ 74 cited

A non-volatile memory based on nonlinear magnetoelectric effects

Jianxin Shen, Junzhuang Cong, Yisheng Chai +5

The magnetoelectric effects in multiferroics have a great potential in creating next-generation memory devices. We conceive a new concept of non-volatile memories based on a type o…