activity
20162023
most citedA non-volatile memory based on nonlinear magnetoelectric effects

74 citations · 134 across the 5 of their papers we have counts for

collaborators

5 papers

physics.app-ph2023★ 1 cited

Non-volatile memory based on PZT/FeGa thin film memtranstor

Jin-Cheng He, Jian Xing, Jian-Xin Shen +4

The PZT/FeGa thin film memtranstor was prepared and the modulation of the magnetoelectric coefficient by external magnetic and electric fields was studied. The magnetoelectric coef…

cond-mat.mtrl-sci2018★ 22 cited

Probe Skyrmion phases and dynamics in MnSi via the magnetoelectric effect in a composite configuration

Yisheng Chai, Peipei Lu, Haifeng Du +8

We have developed a sensitive technique to probe the magnetic skyrmion phases and dynamics by employing the interfacial coupling effect in a magnetoelectric composite configuration…

cs.ET2016★ 37 cited

Nonvolatile Multi-level Memory and Boolean Logic Gates Based on a Single Memtranstor

Jianxin Shen, Dashan Shang, Yisheng Chai +6

Memtranstor that correlates charge and magnetic flux via nonlinear magnetoelectric effects has a great potential in developing next-generation nonvolatile devices. In addition to m…

cond-mat.mtrl-sci2016

A multilevel nonvolatile magnetoelectric memory based on memtranstor

Jianxin Shen, Junzhuang Cong, Dashan Shang +4

The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices.…

cond-mat.mtrl-sci2016★ 74 cited

A non-volatile memory based on nonlinear magnetoelectric effects

Jianxin Shen, Junzhuang Cong, Yisheng Chai +5

The magnetoelectric effects in multiferroics have a great potential in creating next-generation memory devices. We conceive a new concept of non-volatile memories based on a type o…