2 papers
cond-mat.mes-hall2018
Substitutional mechanism for growth of hexagonal boron nitride on epitaxial graphene
Patrick C. Mende, Jun Li, Randall M. Feenstra
Monolayer-thick hexagonal boron nitride (h-BN) is grown on graphene on SiC(0001), by exposure of the graphene to borazine, (BH)3(NH)3, at 1100 C. The h-BN films form ~2-micrometer…
cond-mat.mtrl-sci2016
Epitaxial graphene homogeneity and quantum Hall effect in millimeter-scale devices
Yanfei Yang, Guangjun Cheng, Patrick Mende +8
Quantized magnetotransport is observed in 5.6 x 5.6 mm^2 epitaxial graphene devices, grown using highly constrained sublimation on the Si-face of SiC(0001) at high temperature (190…