222 citations · 311 across the 6 of their papers we have counts for
6 papers
Substitutional mechanism for growth of hexagonal boron nitride on epitaxial graphene
Patrick C. Mende, Jun Li, Randall M. Feenstra
Monolayer-thick hexagonal boron nitride (h-BN) is grown on graphene on SiC(0001), by exposure of the graphene to borazine, (BH)3(NH)3, at 1100 C. The h-BN films form ~2-micrometer…
Epitaxial graphene homogeneity and quantum Hall effect in millimeter-scale devices
Yanfei Yang, Guangjun Cheng, Patrick Mende +8
Quantized magnetotransport is observed in 5.6 x 5.6 mm^2 epitaxial graphene devices, grown using highly constrained sublimation on the Si-face of SiC(0001) at high temperature (190…
Formation of hexagonal Boron Nitride on Graphene-covered Copper Surfaces
Devashish P. Gopalan, Patrick C. Mende, Sergio C. de la Barrera +10
Graphene-covered copper surfaces have been exposed to borazine, (BH)3(NH)3, with the resulting surfaces characterized by low-energy electron microscopy. Although the intent of the…
Molecular beam epitaxial growth of MoSe2 on graphite, CaF2 and graphene
Suresh Vishwanath, Xinyu Liu, Sergei Rouvimov +8
We report the structural and optical properties of molecular beam epitaxy (MBE) grown 2-dimensional (2D) material molybdenum diselenide (MoSe2) on graphite, CaF2 and epitaxial grap…
Probing critical point energies of transition metal dichalcogenides: surprising indirect gap of single layer
Chendong Zhang, Yuxuan Chen, Amber Johnson +5
Understanding quasiparticle band structures of transition metal dichalcogenides (TMDs) is critical for technological advances of these materials for atomic layer electronics and ph…
Graphene formed on SiC under various environments: Comparison of Si-face and C-face
N. Srivastava, Guowei He, Luxmi +3
The morphology of graphene on SiC {0001} surfaces formed in various environments including ultra-high vacuum, 1 atm of argon, and 10^-6 to 10^-4 Torr of disilane is studied by atom…