187 citations · 401 across the 8 of their papers we have counts for
9 papers
Investigation of Lasing in Highly Strained Germanium at the Crossover to Direct Band Gap
Francesco Armand Pilon, Yann-Michel Niquet, Jeremie Chretien +8
Efficient and cost-effective Si-compatible lasers are a long standing wish of the optoelectronic industry. In principle, there are two options. For many applications, lasers based…
Reduced lasing thresholds in GeSn microdisk cavities with defect management of the optically active region
Anas Elbaz, Riazul Arefin, Emilie Sakat +20
GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible app…
Lasing in Group-IV materials
V. Reboud, D. Buca, H. Sigg +6
Silicon photonics in the near-Infra-Red, up to 1.6 um, is already one of key technologies in optical data communications, particularly short-range. It is also being prospected for…
Optically pumped GeSn micro-disks with 16 % Sn lasing at 3.1 um up to 180K
V. Reboud, A. Gassenq, N. Pauc +13
Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the prospect of efficient laser sources monolithically integrated on a Si photonic platform. For i…
Raman spectral shift versus strain and composition in GeSn layers with: 6 to 15% Sn contents
A. Gassenq, L. Milord, J. Aubin +8
GeSn alloys are the subject of intense research activities as these group IV semiconductors present direct bandgap behaviors for high Sn contents. Today, the control of strain beco…
Germanium under high tensile stress: nonlinear dependence of direct band gap vs. strain
K. Guilloy, N. Pauc, A. Gassenq +15
Germanium is a strong candidate as a laser source for silicon photonics. It is widely accepted that the band structure of germanium can be altered by tensile strain so as to reduce…