187 citations · 570 across the 10 of their papers we have counts for
11 papers
Investigation of Lasing in Highly Strained Germanium at the Crossover to Direct Band Gap
Francesco Armand Pilon, Yann-Michel Niquet, Jeremie Chretien +8
Efficient and cost-effective Si-compatible lasers are a long standing wish of the optoelectronic industry. In principle, there are two options. For many applications, lasers based…
Monolithic Infrared Silicon Photonics: The Rise of (Si)GeSn Semiconductors
Oussama Moutanabbir, Simone Assali, Xiao Gong +9
(Si)GeSn semiconductors are finally coming of age after a long gestation period. The demonstration of device quality epi-layers and quantum-engineered heterostructures has meant th…
Reduced lasing thresholds in GeSn microdisk cavities with defect management of the optically active region
Anas Elbaz, Riazul Arefin, Emilie Sakat +20
GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible app…
Lasing in Group-IV materials
V. Reboud, D. Buca, H. Sigg +6
Silicon photonics in the near-Infra-Red, up to 1.6 um, is already one of key technologies in optical data communications, particularly short-range. It is also being prospected for…
Highly strained Ge micro-blocks bonded on Si platform for Mid-Infrared photonic applications
Alban Gassenq, Kevin Guilloy, Nicolas Pauc +7
Adding sufficient tensile strain to Ge can turn the material to a direct bandgap group IV semiconductor emitting in the mid-infrared wavelength range. However, highly strained-Ge c…
Optically pumped GeSn micro-disks with 16 % Sn lasing at 3.1 um up to 180K
V. Reboud, A. Gassenq, N. Pauc +13
Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the prospect of efficient laser sources monolithically integrated on a Si photonic platform. For i…
Raman spectral shift versus strain and composition in GeSn layers with: 6 to 15% Sn contents
A. Gassenq, L. Milord, J. Aubin +8
GeSn alloys are the subject of intense research activities as these group IV semiconductors present direct bandgap behaviors for high Sn contents. Today, the control of strain beco…
Germanium under high tensile stress: nonlinear dependence of direct band gap vs. strain
K. Guilloy, N. Pauc, A. Gassenq +15
Germanium is a strong candidate as a laser source for silicon photonics. It is widely accepted that the band structure of germanium can be altered by tensile strain so as to reduce…
Accurate strain measurements in highly strained Ge microbridges
A. Gassenq, S. Tardif, K. Guilloy +16
Ge under high strain is predicted to become a direct bandgap semiconductor. Very large deformations can be introduced using microbridge devices. However, at the microscale, strain…
Lattice strain and tilt mapping in stressed Ge microstructures using X-ray Laue micro-diffraction and rainbow-filtering
Samuel Tardif, Alban Gassenq, Kevin Guilloy +14
Micro-Laue diffraction and simultaneous rainbow-filtered micro-diffraction were used to measure accurately the full strain tensor and the lattice orientation distribution at the su…
Uniaxially stressed germanium with fundamental direct band gap
R. Geiger, T. Zabel, E. Marin +17
We demonstrate the crossover from indirect- to direct band gap in tensile-strained germanium by temperature-dependent photoluminescence. The samples are strained microbridges that…