187 citations · 425 across the 6 of their papers we have counts for
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cond-mat.mtrl-sci2016★ 3 cited
Germanium under high tensile stress: nonlinear dependence of direct band gap vs. strain
K. Guilloy, N. Pauc, A. Gassenq +15
Germanium is a strong candidate as a laser source for silicon photonics. It is widely accepted that the band structure of germanium can be altered by tensile strain so as to reduce…
cond-mat.mtrl-sci2016★ 42 cited
Accurate strain measurements in highly strained Ge microbridges
A. Gassenq, S. Tardif, K. Guilloy +16
Ge under high strain is predicted to become a direct bandgap semiconductor. Very large deformations can be introduced using microbridge devices. However, at the microscale, strain…
cond-mat.mtrl-sci2016★ 13 cited
Uniaxially stressed germanium with fundamental direct band gap
R. Geiger, T. Zabel, E. Marin +17
We demonstrate the crossover from indirect- to direct band gap in tensile-strained germanium by temperature-dependent photoluminescence. The samples are strained microbridges that…