187 citations · 397 across the 7 of their papers we have counts for
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Germanium under high tensile stress: nonlinear dependence of direct band gap vs. strain
K. Guilloy, N. Pauc, A. Gassenq +15
Germanium is a strong candidate as a laser source for silicon photonics. It is widely accepted that the band structure of germanium can be altered by tensile strain so as to reduce…
Accurate strain measurements in highly strained Ge microbridges
A. Gassenq, S. Tardif, K. Guilloy +16
Ge under high strain is predicted to become a direct bandgap semiconductor. Very large deformations can be introduced using microbridge devices. However, at the microscale, strain…
Lattice strain and tilt mapping in stressed Ge microstructures using X-ray Laue micro-diffraction and rainbow-filtering
Samuel Tardif, Alban Gassenq, Kevin Guilloy +14
Micro-Laue diffraction and simultaneous rainbow-filtered micro-diffraction were used to measure accurately the full strain tensor and the lattice orientation distribution at the su…
Uniaxially stressed germanium with fundamental direct band gap
R. Geiger, T. Zabel, E. Marin +17
We demonstrate the crossover from indirect- to direct band gap in tensile-strained germanium by temperature-dependent photoluminescence. The samples are strained microbridges that…