activity
20122021
most citedIn-Memory and Error-Immune Differential RRAM Implementation of Binarized Deep Neural Networks

83 citations · 180 across the 15 of their papers we have counts for

collaborators

16 papers

cs.LG2021★ 6 cited

Model of the Weak Reset Process in HfOx Resistive Memory for Deep Learning Frameworks

Atreya Majumdar, Marc Bocquet, Tifenn Hirtzlin +6

The implementation of current deep learning training algorithms is power-hungry, owing to data transfer between memory and logic units. Oxide-based RRAMs are outstanding candidates…

cs.ET2020

Embracing the Unreliability of Memory Devices for Neuromorphic Computing

Marc Bocquet, Tifenn Hirtzlin, Jacques-Olivier Klein +4

The emergence of resistive non-volatile memories opens the way to highly energy-efficient computation near- or in-memory. However, this type of computation is not compatible with c…

cs.ET2020★ 1 cited

Implementation of Ternary Weights with Resistive RAM Using a Single Sense Operation per Synapse

Axel Laborieux, Marc Bocquet, Tifenn Hirtzlin +5

The design of systems implementing low precision neural networks with emerging memories such as resistive random access memory (RRAM) is a significant lead for reducing the energy…

eess.SP2020

In-Memory Resistive RAM Implementation of Binarized Neural Networks for Medical Applications

Bogdan Penkovsky, Marc Bocquet, Tifenn Hirtzlin +5

The advent of deep learning has considerably accelerated machine learning development. The deployment of deep neural networks at the edge is however limited by their high memory an…

cs.ET2020

Low Power In-Memory Implementation of Ternary Neural Networks with Resistive RAM-Based Synapse

Axel Laborieux, Marc Bocquet, Tifenn Hirtzlin +6

The design of systems implementing low precision neural networks with emerging memories such as resistive random access memory (RRAM) is a major lead for reducing the energy consum…

cs.ET2019

Implementing Binarized Neural Networks with Magnetoresistive RAM without Error Correction

Tifenn Hirtzlin, Bogdan Penkovsky, Jacques-Olivier Klein +5

One of the most exciting applications of Spin Torque Magnetoresistive Random Access Memory (ST-MRAM) is the in-memory implementation of deep neural networks, which could allow impr…

cs.ET2019

Digital Biologically Plausible Implementation of Binarized Neural Networks with Differential Hafnium Oxide Resistive Memory Arrays

Tifenn Hirtzlin, Marc Bocquet, Bogdan Penkovsky +5

The brain performs intelligent tasks with extremely low energy consumption. This work takes inspiration from two strategies used by the brain to achieve this energy efficiency: the…

cs.ET2019

Stochastic Computing for Hardware Implementation of Binarized Neural Networks

Tifenn Hirtzlin, Bogdan Penkovsky, Marc Bocquet +3

Binarized Neural Networks, a recently discovered class of neural networks with minimal memory requirements and no reliance on multiplication, are a fantastic opportunity for the re…

cs.ET2019

Outstanding Bit Error Tolerance of Resistive RAM-Based Binarized Neural Networks

Tifenn Hirtzlin, Marc Bocquet, Jacques-Olivier Klein +4

Resistive random access memories (RRAM) are novel nonvolatile memory technologies, which can be embedded at the core of CMOS, and which could be ideal for the in-memory implementat…

cs.ET2019★ 83 cited

In-Memory and Error-Immune Differential RRAM Implementation of Binarized Deep Neural Networks

Marc Bocquet, Tifenn Hirztlin, Jacques-Olivier Klein +4

RRAM-based in-Memory Computing is an exciting road for implementing highly energy efficient neural networks. This vision is however challenged by RRAM variability, as the efficient…

cs.NE2017

Spatio-temporal Learning with Arrays of Analog Nanosynapses

Christopher H. Bennett, Damien Querlioz, Jacques-Olivier Klein

Emerging nanodevices such as resistive memories are being considered for hardware realizations of a variety of artificial neural networks (ANNs), including highly promising online…

cond-mat.mes-hall2016★ 48 cited

A gate-variable spin current demultiplexer based on graphene

Li Su, Xiaoyang Lin, Youguang Zhang +5

Spintronics, which utilizes spin as information carrier, is a promising solution for nonvolatile memory and low-power computing in the post-Moore era. An important challenge is to…

cs.NE2016

Exploiting the Short-term to Long-term Plasticity Transition in Memristive Nanodevice Learning Architectures

Christopher H. Bennett, Selina La Barbera, Adrien F. Vincent +2

Memristive nanodevices offer new frontiers for computing systems that unite arithmetic and memory operations on-chip. Here, we explore the integration of electrochemical metallizat…

cond-mat.mtrl-sci2016★ 1 cited

Perspectives of Racetrack Memory for Large-Capacity On-Chip Memory: From Device to System

Yue Zhang, Chao Zhang, Jiang Nan +6

Current-induced domain wall motion (CIDWM) is regarded as a promising way towards achieving emerging high-density, high-speed and low-power non-volatile devices. Racetrack memory i…

cond-mat.mtrl-sci2015

Current-limiting challenges for all-spin logic devices

Li Su, Youguang Zhang, Jacques-Olivier Klein +4

All-spin logic device (ASLD) has attracted increasing interests as one of the most promising post-CMOS device candidates, thanks to its low power, non-volatility and logic-in-memor…

cs.ET2012★ 41 cited

Cross-point architecture for spin transfer torque magnetic random access memory

Weisheng Zhao, Sumanta Chaudhuri, Celso Accoto +3

Spin transfer torque magnetic random access memory (STT-MRAM) is considered as one of the most promising candidates to build up a true universal memory thanks to its fast write/rea…