11 citations · 11 across the 2 of their papers we have counts for
3 papers · 1 filter
Thermally activated diffusion and lattice relaxation in (Si)GeSn materials
Nils von den Driesch, Stephan Wirths, Rene Troitsch +5
Germanium-Tin (GeSn) alloys have emerged as a promising material for future optoelectronics, energy harvesting and nanoelectronics owing to their direct bandgap and compatibility w…
Design of materials properties and device performance in memristive systems
Michael Lübben, Felix Cüppers, Johannes Mohr +5
Future development of the modern nanoelectronics and its flagships internet of things and artificial intelligence as well as many related applications is largely associated with me…
Hafnium carbide formation in oxygen deficient hafnium oxide thin films
C. Rodenbücher, E. Hildebrandt, K. Szot +6
On highly oxygen deficient thin films of hafnium oxide (hafnia, HfO) contaminated with adsorbates of carbon oxides, the formation of hafnium carbide (HfC) at the surfac…