55 citations · 104 across the 5 of their papers we have counts for
5 papers
Superexchange coupling of donor qubits in silicon
Mushita M. Munia, Serajum Monir, Edyta N. Osika +2
Atomic engineering in a solid-state material has the potential to functionalize the host with novel phenomena. STM-based lithographic techniques have enabled the placement of indiv…
Valley interference and spin exchange at the atomic scale in silicon
B. Voisin, J. Bocquel, A. Tankasala +6
Tunneling is a fundamental quantum process with no classical equivalent, which can compete with Coulomb interactions to give rise to complex phenomena. Phosphorus dopants in silico…
Characterizing Si:P quantum dot qubits with spin resonance techniques
Yu Wang, Chin-Yi Chen, Gerhard Klimeck +2
Quantum dots patterned by atomically precise placement of phosphorus donors in single crystal silicon have long spin lifetimes, advantages in addressability, large exchange tunabil…
Spatial Metrology of Dopants in Silicon with Exact Lattice Site Precision
Muhammad Usman, Juanita Bocquel, Joe Salfi +6
The aggressive scaling of silicon-based nanoelectronics has reached the regime where device function is affected not only by the presence of individual dopants, but more critically…
Spatially resolved resonant tunneling on single atoms in silicon
B. Voisin, J. Salfi, J. Bocquel +2
The ability to control single dopants in solid-state devices has opened the way towards reliable quantum computation schemes. In this perspective it is essential to understand the…