2 citations · 2 across the 2 of their papers we have counts for
7 papers
Doping profile engineered triple heterojunction TFETs with 12 nm body thickness
Chin-Yi Chen, Hsin-Ying Tseng, Hesameddin Ilatikhameneh +4
Triple heterojunction (THJ) TFETs have been proposed to resolve the low ON-current challenge of TFETs. However, the design space for THJ-TFETs is limited by fabrication challenges…
Impact of body thickness and scattering on III-V triple heterojunction Fin-TFET modeled with atomistic mode space approximation
Chin-Yi Chen, Hesameddin Ilatikhameneh, Jun Z. Huang +2
The triple heterojunction TFET has been originally proposed to resolve TFET's low ON-current challenge. The carrier transport in such devices is complicated due to the presence of…
The Sub-band Structure of Atomically Sharp Dopant Profiles in Silicon
Federico Mazzola, Chin-Yi Chen, Rajib Rahman +7
The downscaling of silicon-based structures and proto-devices has now reached the single atom scale, representing an important milestone for the development of a silicon-based quan…
Addressable electron spin resonance using donors and donor molecules in silicon
Samuel J. Hile, Lukas Fricke, Matthew G. House +8
Phosphorus donor impurities in silicon are a promising candidate for solid-state quantum computing due to their exceptionally long coherence times and high fidelities. However, ind…
Channel thickness optimization for ultra thin and 2D chemically doped TFETs
Chin-Yi Chen, Tarek A. Ameen, Hesameddin Ilatikhameneh +3
2D material based tunnel FETs are among the most promising candidates for low power electronics applications since they offer ultimate gate control and high current drives that are…
All-electrical control of donor-bound electron spin qubits in silicon
Yu Wang, Chin-Yi Chen, Gerhard Klimeck +2
We propose a method to electrically control electron spins in donor-based qubits in silicon. By taking advantage of the hyperfine coupling difference between a single-donor and a t…