48 citations · 110 across the 7 of their papers we have counts for
8 papers
Doping profile engineered triple heterojunction TFETs with 12 nm body thickness
Chin-Yi Chen, Hsin-Ying Tseng, Hesameddin Ilatikhameneh +4
Triple heterojunction (THJ) TFETs have been proposed to resolve the low ON-current challenge of TFETs. However, the design space for THJ-TFETs is limited by fabrication challenges…
Impact of body thickness and scattering on III-V triple heterojunction Fin-TFET modeled with atomistic mode space approximation
Chin-Yi Chen, Hesameddin Ilatikhameneh, Jun Z. Huang +2
The triple heterojunction TFET has been originally proposed to resolve TFET's low ON-current challenge. The carrier transport in such devices is complicated due to the presence of…
The Sub-band Structure of Atomically Sharp Dopant Profiles in Silicon
Federico Mazzola, Chin-Yi Chen, Rajib Rahman +7
The downscaling of silicon-based structures and proto-devices has now reached the single atom scale, representing an important milestone for the development of a silicon-based quan…
Addressable electron spin resonance using donors and donor molecules in silicon
Samuel J. Hile, Lukas Fricke, Matthew G. House +8
Phosphorus donor impurities in silicon are a promising candidate for solid-state quantum computing due to their exceptionally long coherence times and high fidelities. However, ind…
Channel thickness optimization for ultra thin and 2D chemically doped TFETs
Chin-Yi Chen, Tarek A. Ameen, Hesameddin Ilatikhameneh +3
2D material based tunnel FETs are among the most promising candidates for low power electronics applications since they offer ultimate gate control and high current drives that are…
Sensitivity Challenge of Steep Transistors
Hesameddin Ilatikhameneh, Tarek Ameen, ChinYi Chen +2
Steep transistors are crucial in lowering power consumption of the integrated circuits. However, the difficulties in achieving steepness beyond the Boltzmann limit experimentally h…
All-electrical control of donor-bound electron spin qubits in silicon
Yu Wang, Chin-Yi Chen, Gerhard Klimeck +2
We propose a method to electrically control electron spins in donor-based qubits in silicon. By taking advantage of the hyperfine coupling difference between a single-donor and a t…
Characterizing Si:P quantum dot qubits with spin resonance techniques
Yu Wang, Chin-Yi Chen, Gerhard Klimeck +2
Quantum dots patterned by atomically precise placement of phosphorus donors in single crystal silicon have long spin lifetimes, advantages in addressability, large exchange tunabil…