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cond-mat.mtrl-sci2026
Growth and characterization of planar hexagonal Ge on CdS
Andrea Besana, Veronica Regazzoni, Marco Faverzani +13
Hexagonal group-IV semiconductors have attracted increasing interest owing to their unconventional electronic and optical properties compared to the cubic diamond phase. However, t…
cond-mat.mtrl-sci2025
Brittle-to-ductile transition and strain relaxation in SiGe linearly graded buffers
Riccardo Civiero, Elena Campagna, Afonso Cerdeira Oliveira +5
The strain-relaxation mechanism of a set of SiGe linearly graded buffers (LGBs), grown following different temperature profiles, has been investigated by means of d…