4 papers
Protected valley splitting against interface disorder toward scalable silicon electron spin qubits
Yang Liu, Gang Wang, Shan Guan +2
Regardless of various material design strategies, experimentally achieving substantial and controllable valley splitting in Si/SiGe quantum wells remains a central challenge for en…
Unified interface dipole theory for Fermi level pinning effect at metal-semiconductor contacts
Ziying Xiang, Jun-Wei Luo, Shu-Shen Li
We present a unified bond dipole theory for metal-semiconductor interfaces to explain the microscopic origin of interface dipoles and Fermi level pinning (FLP) in terms of Harrison…
Self-passivation reduces the Fermi level pinning in the metal-semiconductor contacts
Ziying Xiang, Jun-Wei Luo, Shu-Shen Li
The metal-induced gap states (MIGS) are commonly believed to cause the strong Femi level pinning (FLP) in the metal-semiconductors contacts. Here, we unravel unambiguously that the…
Ultrafast dynamics of atomic correlated disordering in photoinduced VO
Wen-Hao Liu, Feng-Wu Guo, Lin-Wang Wang +1
Recent experiments suggest that atomic disordering dynamics are more universal than conventional coherent processes in photoinduced phase transitions (PIPTs), yet its mechanism rem…