activity
20142023
most citedQuantum transport evidence of Weyl fermions in an epitaxial ferromagnetic oxide

124 citations · 312 across the 17 of their papers we have counts for

collaborators
Showing cond-mat.mes-hallShow all

11 papers · 1 filter

cond-mat.mes-hall2022★ 9 cited

Time-resolved measurement of ambipolar edge magnetoplasmon transport in InAs/InGaSb composite quantum wells

Hiroshi Kamata, Hiroshi Irie, Norio Kumada +1

Time-resolved charge transport measurement for one-dimensional edge states is a powerful means for investigating nonequilibrium charge dynamics and underlying interaction effects t…

cond-mat.mes-hall2020★ 23 cited

Energy gap tuning and gate-controlled topological phase transition in InAs/InGaSb composite quantum wells

H. Irie, T. Akiho, F. Couëdo +3

We report transport measurements of strained InAs/InGaSb composite quantum wells (CQWs) in the quantum spin Hall phase, focusing on the control of the energy gap thro…

cond-mat.mes-hall2020★ 10 cited

Determination of -factor in InAs two-dimensional electron system by capacitance spectroscopy

Hiroshi Irie, Takafumi Akiho, Koji Muraki

We determine the effective -factor () of a two-dimensional electron gas (2DEG) using a new method based on capacitance spectroscopy. The capacitance-voltage profile of…

cond-mat.mes-hall2020★ 5 cited

Impact of epitaxial strain on the topological-nontopological phase diagram and semimetallic behavior of InAs/GaSb composite quantum wells

H. Irie, T. Akiho, F. Couëdo +4

We study the influence of epitaxial strain on the electronic properties of InAs/GaSb composite quantum wells (CQWs), host structures for quantum spin Hall insulators, by transport…

cond-mat.mes-hall2019★ 17 cited

Counterflowing edge current and its equilibration in quantum Hall devices with sharp edge potential: Roles of incompressible strips and contact configuration

T. Akiho, H. Irie, K. Onomitsu +1

We report the observation of counterflowing edge current in InAs quantum wells which leads to the breakdown of quantum Hall (QH) effects at high magnetic fields. Counterflowing edg…

cond-mat.mes-hall2019

Pseudospin Berry phase as a signature of nontrivial band topology in a two-dimensional system

F. Couëdo, H. Irie, T. Akiho +3

Electron motion in crystals is governed by the coupling between crystal momentum and internal degrees of freedom such as spin implicit in the band structure. The description of thi…

cond-mat.mes-hall2016★ 29 cited

Engineering quantum spin Hall insulators by strained-layer heterostructures

Takafumi Akiho, François Couëdo, Hiroshi Irie +3

Quantum spin Hall insulators (QSHIs), also known as two-dimensional topological insulators, have emerged as an unconventional class of quantum states with insulating bulk and condu…

cond-mat.mes-hall2016★ 37 cited

Single-edge transport in an InAs/GaSb quantum spin Hall insulator

François Couëdo, Hiroshi Irie, Kyoichi Suzuki +2

We report transport measurements in a single edge channel of an InAs/GaSb quantum spin Hall insulator, where the conduction occurs through only one pair of counterpropagating edge…

cond-mat.mes-hall2016★ 12 cited

Evaluation of Disorder Introduced by Electrolyte Gating through Transport Measurements in Graphene

Andrew Browning, Norio Kumada, Yoshiaki Sekine +3

We evaluate the degree of disorder in electrolyte gating devices through the transport measurements in graphene. By comparing the mobility in ion- and standard metal-gated devices,…

cond-mat.mes-hall2016★ 2 cited

Andreev reflection and bound state formation in a ballistic two-dimensional electron gas probed by a quantum point contact

Hiroshi Irie, Clemens Todt, Norio Kumada +4

We study coherent transport and bound-state formation of Bogoliubov quasiparticles in a high-mobility InGaAs two-dimensional electron gas (2DEG) coupled to a sup…

cond-mat.mes-hall2014★ 16 cited

Josephson coupling through one-dimensional ballistic channel in semiconductor-superconductor hybrid quantum point contacts

Hiroshi Irie, Yuichi Harada, Hiroki Sugiyama +1

We study a superconducting quantum point contact made of a narrow InGaAs channel with Nb proximity electrodes. The narrow channel is formed in a gate-fitted con…