5 papers
Reststrahlen band and optical bandgaps in semiconducting CrN films
Duc V. Dinh, Xiang Lü, Oliver Brandt +8
We present a comprehensive optical characterization of 200-nm-thick CrN(111) films grown simultaneously on AlO(0001) and AlN/AlO(0001) using plasma-assisted molecul…
Carrier transport and electrical bandgaps in epitaxial CrN layers
Duc V. Dinh, Jens Herfort, Andreas Fiedler +1
The transport properties and electrical bandgap of nominally undoped ~75-nm-thick CrN layers simultaneously grown on AlN(0001) and AlN(11\bar{2}2) templates using plasma-assisted m…
Rock-salt ScN(113) layers grown on AlN by plasma-assisted molecular beam epitaxy
Duc V. Dinh, Esperanza Luna, Oliver Brandt
Transition-metal nitrides constitute a versatile class of materials with diverse properties and wide-ranging applications. Exploring new surface orientations and uncovering novel p…
Crack-free ScAlN(000) layers grown on Si(111) by plasma-assisted molecular beam epitaxy
Duc V. Dinh, Zhuohui Chen, Oliver Brandt
We investigate the synthesis of 340-nm-thick ScAlN layers with on AlN-buffered Si(111) by plasma-assisted molecular beam epitaxy. We employ an AlN…
Growth of compositionally uniform layers with low relaxation degree on GaN by molecular beam epitaxy
Jingxuan Kang, Mikel Gómez Ruiz, Duc Van Dinh +7
500-nm-thick layers with 0.05-0.14 are grown using plasma-assisted molecular beam epitaxy, and their properties are assessed by a…