291 citations · 619 across the 16 of their papers we have counts for
16 papers
Abnormal behavior of preferred formation of cationic vacancy from the interior in γ-GeSe monolayer with the stereo-chemical antibonding lone-pair state
Changmeng Huan, Yongqing Cai, Devesh R. Kripalani +2
Two-dimensional (2D) materials tend to have the preferably formation of vacancies at the outer surface. Here, contrary to the normal notion, we reveal a type of vacancy that thermo…
Versatile van der Waals Heterostructures of Gamma-GeSe with h-BN/Graphene/MoS2
Changmeng Huan, Pu Wang, Bingtao Liu +3
Recent discovery of a novel hexagonal phase of GeSe (Gamma-GeSe) has triggered great interests in nanoelectronics applications owing to its electrical conductivity of bulk phase ev…
Highly Modulated Dual Semimetal and Semiconducting Gamma-GeSe with Strain Engineering
Changmeng Huan, Pu Wang, Binghan He +2
Layered hexagonal Gamma--GeSe, a new polymorph of GeSe synthesized recently, shows strikingly high electronic conductivity in its bulk form (even higher than graphite) while semico…
Phonon anharmonicity and thermal conductivity of two-dimensional van der Waals materials: A review
Xuefei Yan, Bowen Wang, Yulong Hai +3
Two-dimensional (2D) van der Waals (vdW) materials have extraordinary thermal properties due to the effect of quantum confinement, making them promising for thermoelectric energy c…
Oxygen Deficient α-MoO3 with Promoted Adsorption and State-Quenching of H2O for Gas Sensor: A DFT Study
Changmeng Huan, Pu Wang, Binghan He +2
Semiconducting oxides with reducible cations are ideal platforms for various functional applications in nanoelectronics and catalysts. Here we report an ultrathin monolayer alpha-M…
Utilization of Strong Charge Transfer Efficiency at 2H-1T Phase Boundary of MoS2 for Superb High-Performance Charge Storage
Qingqing Ke, Xiao Zhang, Abdelnaby M. Elshahawy +4
Transition metal dichalcogenides like MoS2 can exist many phases like the semiconducting 2H and the metallic 1T phases which have shown intriguing properties for energy and electro…
Surface-charge-mediated Formation of H-TiO2@Ni(OH)2 Heterostructures for High-Performance Supercapcitors
Qingqing Ke, Cao Guan, Xiao Zhang +5
Supercapacitors or ultracapacitors are promising for efficient energy storage applications, owing to their high power density, high charge-discharge rates, and long cycle life perf…
Design of Phosphorene for Hydrogen Evolution Performance Comparable to Platinum
Yongqing Cai, Junfeng Gao, Shuai Chen +3
Phosphorene, a monolayer of bulk black phosphorus, is promising for light harvest owing to its high charge mobility and tunable direct band gap covering a broad spectral range of l…
Highly Itinerant Atomic Vacancies in Phosphorene
Yongqing Cai, Qingqing Ke, Gang Zhang +2
Using detailed first-principles calculations, we investigate the hopping rate of vacancies in phosphorene, an emerging elemental 2D material besides graphene. Our work predicts tha…
Giant Phononic Anisotropy and Unusual Anharmonicity of Phosphorene: Interlayer Coupling and Strain Engineering
Yongqing Cai, Qingqing Ke, Gang Zhang +3
Phosphorene, an emerging elemental two-dimensional (2D) direct band gap semiconductor with fascinating structural and electronic properties distinctively different from other 2D ma…
Energetics, Charge Transfer and Magnetism of Small Molecules Physisorbed on Phosphorene
Yongqing Cai, Qingqing Ke, Gang Zhang +1
First-principles calculations are performed to investigate the interaction of physisorbed small molecules, including CO, H2, H2O, NH3, NO, NO2, and O2, with phosphorene, and their…
Microstructural Evolution of Charged Defects in the Fatigue Process of Polycrystalline BiFeO3 Thin Films
Qingqing Ke, Amit Kumar, Xiaojie Lou +4
Fatigue failure in ferroelectrics has been intensively investigated in the past few decades. Most of the mechanisms discussed for ferroelectric fatigue have been built on the "hypo…
Origin of the Enhanced Polarization in La and Mg Co-substituted BiFeO3 Thin Film during the Fatigue Process
Qingqing Ke, Amit Kumar, Xiaojie Lou +2
We have studied the polarization fatigue of La and Mg co-substituted BiFeO3 thin film, where a polarization peak is observed during the fatigue process. The origin of such anomalou…
Highly (111)-orientated BiFeO3 thin film deposited on La0.67Sr0.33MnO3 buffered Pt/TiO2/SiO2/Si (100) substrate
Qingqing Ke, Wenlai Lu, Xuelian Huang +1
Multiferroic BiFeO3 (BFO) thin film exhibiting desired ferroelectric and enhanced magnetic properties was grown on La0.67Sr0.33MnO3 (LSMO) buffered Pt/TiO2/SiO2/Si substrates by of…
Oxygen-vacancy-mediated Negative Differential Resistance in La and Mg co-substituted BiFeO3 Thin Film
Qingqing Ke, Amit Kumar, Xiaojie Lou +2
The conductive characteristics of Bi0.9La0.1Fe0.96Mg0.04O3(BLFM) thin film are investigated at various temperatures and a negative differential resistance (NDR) is observed in the…
Oxygen-vacancy-related relaxation and scaling behaviors of Bi0.9La0.1Fe0.98Mg0.02O3 (La,Mg-codoped BiFeO3) ferroelectric thin film
Qingqing Ke, Xiaojie Lou, Yang Wang +1
Oxygen-vacancies-related dielectric relaxation and scaling behaviors of Bi0.9La0.1Fe0.98Mg0.02O3 (BLFM) thin film have been investigated by temperature-dependent impedance spectros…