32 citations · 48 across the 7 of their papers we have counts for
7 papers
Depth resolved study of annealing in IrMn/(Fe, Co, CoFe) exchange bias systems
Yu. Khaydukov, A. Dobrynin, S. Hassan +7
Depth resolved study of structural and magnetic profiles of antiferromagnetic/ferromagnetic (AFM/FM) system upon annealing was performed in this work. We studied systems comprising…
Magnetic and Superconducting Phase Diagram of Nb/Gd/Nb trilayers
Yu. N. Khaydukov, A. S. Vasenko, E. A. Kravtsov +11
We report on a study of the structural, magnetic and superconducting properties of Nb(25nm)/Gd()/Nb(25nm) hybrid structures of a superconductor/ ferromagnet (S/F) type. The st…
Thermally activated processes of the phase composition and structure formation of the nanoscaled Co-Sb films
R. A. Shkarban, Ya. S. Peresunko, E. P. Pavlova +3
It is investigated the formation of the phase composition and structure in the nanoscaled CoSbx (30 nm) films deposited by the method of molecular-beam epitaxy on the substrates of…
Oscillations and huge preferences of PbTe crystal surface sputtering under Secondary Neutral Mass Spectrometry conditions
D. M. Zayachuk, E. I. Slynko, V. E. Slynko +1
Sputtering of PbTe crystals by Ar plasma with ion energies 50-550 eV is investigated. A dependence of sputter yields of the Te and Pb on the sputtering ion energy and sputtering ti…
Nanoscale characterization of thin immersion silver coatings on copper substrates
T. I. Török, A. Csik, J. Hakl +6
Microelectronic-grade copper foils were immersion silver plated in a home-made non-cyanide alkaline silver nitrate - thiosulfate solution and in two commercially available industri…
Ion beam effect on Ge-Se chalcogenide glass films: Non-volatile memory array formation, structural changes and device performance
M. R. Latif, T. L. Nichol, M. Mitkova +4
The conductive bridge non-volatile memory technology is an emerging way to replace traditional charge based memory devices for future neural networks and configurable logic applica…
Segregation of the Eu impurity as function of its concentration in the melt for growing of the lead telluride doped crystals by the Bridgman method
D. M. Zayachuka, O. S. Ilyinaa, A. V. Pashuka +4
Behaviour of a rare earth impurity of Eu in the PbTe single crystals grown by the Bridgman method from the melt with different initial concentrations of impurity N about 1*10+19 cm…