activity
20102020
most citedAnomalous Hall effect in a 2D magnetic semiconductor hetereostructure: Evidence of Berry phase effects in the hopping-transport regime

36 citations · 102 across the 7 of their papers we have counts for

collaborators

7 papers

cond-mat.str-el2020★ 8 cited

Control of Mooij correlations at the nanoscale in the disordered metallic Ta - nanoisland FeNi multilayers

N. N. Kovaleva, F. V. Kusmartsev, A. B. Mekhiya +12

Localisation phenomena in highly disordered metals close to the extreme conditions determined by the Mott-Ioffe-Regel (MIR) limit when the electron mean free path is approximately…

cond-mat.mes-hall2018★ 27 cited

Observation of sub-kelvin superconductivity in CdAs thin films

A. V. Suslov, A. B. Davydov, L. N. Oveshnikov +8

We report the first experimental observation of superconductivity in CdAs thin films without application of external pressure. Surface studies suggest that the observed tra…

cond-mat.mes-hall2018

High temperature magnetism and microstructure of semiconducting ferromagnetic alloy (GaSb)(MnSb)

L. N. Oveshnikov, E. I. Nekhaeva, A. V. Kochura +8

We have studied the properties of relatively thick (about 120 nm) magnetic composite films grown by pulsed laser deposition method using (GaSb)(MnSb) eutectic com…

cond-mat.mes-hall2015★ 36 cited

Anomalous Hall effect in a 2D magnetic semiconductor hetereostructure: Evidence of Berry phase effects in the hopping-transport regime

L. N. Oveshnikov, V. A. Kulbachinskii, A. B. Davydov +5

The temperature and magnetic field dependences of the anomalous Hall effect (AHE) are studied in Mn delta-doped semiconductor heterostructures with a two-dimensional hole gas in a…

cond-mat.mes-hall2015

Resonant indirect exchange via remote 2D channel

I. V. Rozhansky, I. V. Krainov, N. S. Averkiev +5

We apply the previously developed theory of the resonant indirect exchange interaction to explain the ferromagnetic properties of the hybrid heterostructure consisting of a InGaAs-…

cond-mat.mes-hall2012★ 2 cited

Pecularities of Hall effect in GaAs/δ<Mn>/GaAs/In\timesGa1-\timesAs/GaAs (\times {\approx} 0.2) heterostructures with high Mn content

M. A. Pankov, B. A. Aronzon, V. V. Rylkov +9

Transport properties of GaAs/δ<Mn>/GaAs/In\timesGa1-\timesAs/GaAs structures containing InxGa1-xAs (\times {\approx} 0.2) quantum well (QW) and Mn delta layer (DL) with relatively…