88 citations · 336 across the 8 of their papers we have counts for
8 papers
All-MOCVD-Grown Gallium Nitride Diodes with Ultra-Low Resistance Tunnel Junctions
Syed M. N. Hasan, Brendan P. Gunning, Zane J. -Eddine +5
We carefully investigate three important effects including postgrowth activation annealing, delta (δ) dose and p+-GaN layer thickness and experimentally demonstrate their influence…
Cathodoluminescence as an Effective Probe of Carrier Transport and Deep Level Defects in Droop-Mitigating InGaN/GaN Quantum Well Heterostructures
Zhibo Zhao, Akshay Singh, Jordan Chesin +7
Commercial InGaN/GaN light emitting diode heterostructures continue to suffer from efficiency droop at high current densities. Droop mitigation strategies target Auger recombinatio…
Reflective Metal/Semiconductor Tunnel Junctions for Hole Injection in AlGaN UV LEDs
Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol +6
In this work, we investigate the use of nanoscale polarization engineering to achieve efficient hole injection from metals to ultra-wide band gap AlGaN, and we show that UV-reflect…
Tunnel-injected sub-260 nm ultraviolet light emitting diodes
Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol +5
We report on tunnel-injected deep ultraviolet light emitting diodes (UV LEDs) configured with a polarization engineered Al0.75Ga0.25N/ In0.2Ga0.8N tunnel junction structure. Tunnel…
Design and Demonstration of Ultra Wide Bandgap AlGaN Tunnel Junctions
Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol +4
Ultra violet light emitting diodes (UV LEDs) face critical limitations in both the injection efficiency and light extraction efficiency due to the resistive and absorbing p-type co…
Design of P-Type Cladding Layers for Tunnel-Injected UVA Light Emitting Diodes
Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol +4
We discuss the engineering of p-AlGaN cladding layers for achieving efficient tunnel-injected III-Nitride ultraviolet light emitting diodes (UV LEDs) in the UV-A spectral range. We…