88 citations · 333 across the 6 of their papers we have counts for
6 papers
Reflective Metal/Semiconductor Tunnel Junctions for Hole Injection in AlGaN UV LEDs
Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol +6
In this work, we investigate the use of nanoscale polarization engineering to achieve efficient hole injection from metals to ultra-wide band gap AlGaN, and we show that UV-reflect…
Tunnel-injected sub-260 nm ultraviolet light emitting diodes
Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol +5
We report on tunnel-injected deep ultraviolet light emitting diodes (UV LEDs) configured with a polarization engineered Al0.75Ga0.25N/ In0.2Ga0.8N tunnel junction structure. Tunnel…
Design and Demonstration of Ultra Wide Bandgap AlGaN Tunnel Junctions
Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol +4
Ultra violet light emitting diodes (UV LEDs) face critical limitations in both the injection efficiency and light extraction efficiency due to the resistive and absorbing p-type co…
Design of P-Type Cladding Layers for Tunnel-Injected UVA Light Emitting Diodes
Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol +4
We discuss the engineering of p-AlGaN cladding layers for achieving efficient tunnel-injected III-Nitride ultraviolet light emitting diodes (UV LEDs) in the UV-A spectral range. We…
Enhanced Light Extraction in Tunnel Junction Enabled Top Emitting UV LEDs
Yuewei Zhang, Andrew Allerman, Sriram Krishnamoorthy +4
The efficiency of ultra violet LEDs is critically limited by the absorption losses in p-type and metal layers. In this work, surface roughening based light extraction structures ar…
Interband Tunneling for Hole Injection in III-Nitride Ultra-violet Emitters
Yuewei Zhang, Sriram Krishnamoorthy, Jared M. Johnson +6
Ultra-violet emitters have several applications in the areas of sensing, water purification, and data storage. While the III-Nitride semiconductor system has the band gap region ne…