activity
20012026
most citedInfluence of lattice distortion on the Curie temperature and spin-phonon coupling in LaMnCoO

43 citations · 192 across the 15 of their papers we have counts for

collaborators

15 papers

cond-mat.str-el2026

Probing Interfacial Magnetic Anisotropy in \texorpdfstring{CoVO}{CoV2O4} using Spin Hall Magnetoresistance

Sairam Ithineni, Krishna Jha, Aditya A. Wagh +5

Spin Hall magnetoresistance (SMR) has emerged as a powerful probe for investigating interfacial spin transport and magnetic anisotropy in complex oxide heterostructures. In this wo…

cond-mat.mtrl-sci2023★ 3 cited

Observation of Dirac-like surface state bands on the top surface of BiSe

H. Lohani, K. Majhi, R. Ganesan +5

Two quintuple layers of strong topological insulator Bi2Se3 are coupled by a Bi bilayer in BiSe crystal. We investigated its electronic structure using angle resolved photoelectron…

cond-mat.mtrl-sci2023★ 28 cited

Band Structure of Topological Insulator BiSbTe1.25Se1.75

H. Lohani, P. Mishra, A. Banerjee +6

We present our angle resolved photoelectron spectroscopy (ARPES) and density functional theory results on quaternary topological insulator (TI) BiSbTe1.25Se1.75 (BSTS) confirming t…

cond-mat.mtrl-sci2022★ 2 cited

Simple 4-segment thermal cycling pyroelectric measurement protocol for differentiating between ferroelectric and non-ferroelectric materials

Aditya A. Wagh, Shwetha G. Bhat, V. K. Anusree +3

The rare-earth chromates (RECrO) and manganites (REMnO) where, RE = Eu, Y, Dy, Ho, Gd are constantly under scrutiny in search of room temperature magnetoelectric multiferro…

cond-mat.mtrl-sci2022★ 5 cited

Probing magnetic anisotropy and spin-reorientation transition in 3D antiferromagnet, HoDyFeOPt using spin Hall magnetoresistance

Aditya A. Wagh, Priyanka Garg, Arijit Haldar +4

Orthoferrites (FeO) containing rare-earth () elements are 3D antiferromagnets (AFM) that exhibit characteristic weak ferromagnetism originating due to slight canting…

cond-mat.str-el2016★ 8 cited

Metallic monoclinic phase in VO induced by electrochemical gating: in-situ Raman study

Satyendra Nath Gupta, Anand Pal, D. V. S. Muthu +2

We report in-situ Raman scattering studies of electrochemically top gated VO thin film to address metal-insulator transition (MIT) under gating. The room temperature monoclinic…