collaborators

1 paper

cond-mat.mtrl-sci2025

Limitations on Activation of High Dose Ge implant in beta-Ga2O3

Tianhai Luo, Katie R. Gann, Cameron A. Gorsak +6

Among ultrawide bandgap semiconductors, beta-Ga2O3 is particularly promising for high power and frequency applications. For devices, n-type concentrations above 10^19 cm^-3 are req…