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eess.SP2017★ 2 cited
High-Speed Gate Driver Using GaN HEMTs for 20-MHz Hard Switching of SiC MOSFETs
Takafumi Okuda, Takashi Hikihara
In this paper, we investigated a gate driver using a GaN HEMT push-pull configuration for the high-frequency hard switching of a SiC power MOSFET. Low on-resistance and low input c…
eess.SP2017
Transient Behavior of Redox Flow Battery Connected to Circuit Based on Global Phase Structure
Toko Mannari, Takashi Hikihara
A Redox Flow Battery (RFB) is one of the promising energy storage systems in power grid. An RFB has many advantages such as a quick response, a large capacity, and a scalability. D…