317 citations · 485 across the 13 of their papers we have counts for
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physics.app-ph2017★ 317 cited
Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance
Mengxing Wang, Wenlong Cai, Kaihua Cao +11
Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, s…
cond-mat.mtrl-sci2017
Understanding stability diagram of perpendicular magnetic tunnel junctions
Witold Skowroński, Maiej Czapkiewicz, Sławomir Ziętek +4
Perpendicular magnetic tunnel junctions (MTJ) with a bottom pinned reference layer and a composite free layer (FL) are investigated. Different thicknesses of the FL were tested to…