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cond-mat.mtrl-sci2005
Growth of Tellurium on As-exposed Si(211)
Bikash C Gupta, Inder P Batra, S. Sivananthan
Electronic structure calculations are performed to obtain the As-exposed Si(211) and the Te adsorbed As-exposed Si(211) surface. Arsenic-exposed Si(211) may be obtained by adsorbin…
cond-mat.mtrl-sci2003★ 12 cited
Electronic Structure of Te and As Covered Si(211)
Prasenjit Sen, Inder P. Batra, S. Sivananthan +3
Electronic and atomic structures of the clean, and As and Te covered Si(211) surface are studied using pseudopotential density functional method. The clean surface is found to have…