activity
20152026
most citedQuantitative separation of the anisotropic magnetothermopower and planar Nernst effect by the rotation of an in-plane thermal gradient

26 citations · 42 across the 4 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2026

NiTi Single Crystal Growth by Micro-Pulling-Down Method: Experimental Setup and Material Characterization

Timon Sieweke, Chris Luther, Martin Wortmann +14

Nickel-titanium that has an austenite to martensite phase transition has been studied extensively in the past as a shape memory alloy, but a lot remains to be learned from such pha…

cond-mat.mes-hall2017

Proximity-induced superconductivity and quantum interference in topological crystalline insulator SnTe thin film devices

Robin-Pierre Klett, Joachim Schönle, Andreas Becker +12

Topological crystalline insulators represent a new state of matter, in which the electronic transport is governed by mirror-symmetry protected Dirac surface states. Due to the heli…

cond-mat.mtrl-sci2016

How to enable bulk-like martensitic transformation in epitaxial films

Marius Wodniok, Niclas Teichert, Lars Helmich +1

The present study is dedicated to the influence of different substrate and buffer layer materials on the martensitic transformation in sputter deposited epitaxial shape memory Heus…

cond-mat.mes-hall2016★ 26 cited

Quantitative separation of the anisotropic magnetothermopower and planar Nernst effect by the rotation of an in-plane thermal gradient

Oliver Reimer, Daniel Meier, Michel Bovender +9

A thermal gradient as the driving force for spin currents plays a key role in spin caloritronics. In this field the spin Seebeck effect (SSE) is of major interest and was investiga…

cond-mat.mtrl-sci2015★ 16 cited

Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions

Niclas Teichert, Alexander Boehnke, Anna Behler +3

The exchange bias effect is commonly used to shift the coercive field of a ferromagnet. This technique is crucial for the use of magnetic tunnel junctions as logic or memory device…