41 citations · 149 across the 7 of their papers we have counts for
7 papers
NiTi Single Crystal Growth by Micro-Pulling-Down Method: Experimental Setup and Material Characterization
Timon Sieweke, Chris Luther, Martin Wortmann +14
Nickel-titanium that has an austenite to martensite phase transition has been studied extensively in the past as a shape memory alloy, but a lot remains to be learned from such pha…
Proximity-induced superconductivity and quantum interference in topological crystalline insulator SnTe thin film devices
Robin-Pierre Klett, Joachim Schönle, Andreas Becker +12
Topological crystalline insulators represent a new state of matter, in which the electronic transport is governed by mirror-symmetry protected Dirac surface states. Due to the heli…
How to enable bulk-like martensitic transformation in epitaxial films
Marius Wodniok, Niclas Teichert, Lars Helmich +1
The present study is dedicated to the influence of different substrate and buffer layer materials on the martensitic transformation in sputter deposited epitaxial shape memory Heus…
Quantitative separation of the anisotropic magnetothermopower and planar Nernst effect by the rotation of an in-plane thermal gradient
Oliver Reimer, Daniel Meier, Michel Bovender +9
A thermal gradient as the driving force for spin currents plays a key role in spin caloritronics. In this field the spin Seebeck effect (SSE) is of major interest and was investiga…
Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions
Niclas Teichert, Alexander Boehnke, Anna Behler +3
The exchange bias effect is commonly used to shift the coercive field of a ferromagnet. This technique is crucial for the use of magnetic tunnel junctions as logic or memory device…
Structure and Giant Inverse Magnetocaloric Effect of Epitaxial Ni-Co-Mn-Al Films
Niclas Teichert, Daniel Kucza, Oguz Yildirim +10
The structural, magnetic, and magnetocaloric properties of epitaxial Ni-Co-Mn-Al thin films with different compositions have been studied. The films were deposited on MgO(001) subs…
Experimental realization of a semiconducting full Heusler compound: Fe2TiSi
Markus Meinert, Manuel P. Geisler, Jan Schmalhorst +6
Single-phase films of the full Heusler compound Fe2TiSi have been prepared by magnetron sputtering. The compound is found to be a semiconductor with a gap of 0.4eV. The electrical…