Electro-Oxidation of p-Silicon in Fluoride-Containing Electrolyte: A Physical Model for the Regime of Negative Differential Resistance

Munir Salman, Maximilian Patzauer, Dominique Koster +2

When Si is anodically oxidized in a fluoride containing electrolyte, an oxide layer is grown. Simultaneously, the layer is etched by the fluoride containing electrolyte. The result…