221 citations · 2.1k across the 35 of their papers we have counts for
5 papers · 1 filter
Wafer-scale arrayed p-n junctions based on few-layer epitaxial GaTe
Xiang Yuan, Lei Tang, Peng Wang +12
Two-dimensional (2D) materials have attracted substantial attention in electronic and optoelectronic applications with superior advantages of being flexible, transparent and highly…
Gate-tunable quantum oscillations in ambipolar Cd3As2 thin films
Yanwen Liu, Cheng Zhang, Xiang Yuan +9
Electrostatic doping in materials can lead to various exciting electronic properties, such as metal-insulator transition and superconductivity, by altering the Fermi level position…
Landau level splitting in Cd3As2 under high magnetic fields
Junzhi Cao, Sihang Liang, Cheng Zhang +13
Three-dimensional topological Dirac semimetals (TDSs) are a new kind of Dirac materials that exhibit linear energy dispersion in the bulk and can be viewed as three-dimensional gra…
Tunable charge-trap memory based on few-layer MoS2
Enze Zhang, Weiyi Wang, Cheng Zhang +6
Charge-trap memory with high-\k dielectric materials is considered to be a promising candidate for next-generation memory devices. Ultrathin layered two-dimensional (2D) materials…
Controllable Schottky Barriers between MoS2 and Permalloy
Weiyi Wang, Yanwen Liu, Lei Tang +3
MoS2 is a layered two-dimensional material with strong spin-orbit coupling and long spin lifetime, which is promising for electronic and spintronic applications. However, because o…