activity
20152023
most citedMetal-insulator transition in films of doped semiconductor nanocrystals

123 citations · 281 across the 15 of their papers we have counts for

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Showing cond-mat.mes-hallShow all

9 papers · 1 filter

cond-mat.mes-hall2017★ 2 cited

Anomalous Thermodynamic Properties of Electron Accumulation Layer in SrTiO

Michael Sammon, Han Fu, B. I. Shklovskii

Due to the nonlinear dielectric response within SrTiO (STO), an accumulation layer created by positive charges at the surface of the STO sample () has an electron densit…

cond-mat.mes-hall2017★ 2 cited

Roughness scattering induced insulator-metal-insulator transition in a quantum wire

Han Fu, M. Sammon, B. I. Shklovskii

We have theoretically investigated the influence of interface roughness scattering on the low temperature mobility of electrons in quantum wires when electrons fill one or many sub…

cond-mat.mes-hall2016★ 1 cited

Electron Accumulation Layer in Ultrastrong Magnetic Field

M. Sammon, Han Fu, B. I. Shklovskii

When a three-dimensional electron gas is subjected to a very strong magnetic field, it can reach a quasi-one-dimensional state in which all electrons occupy the lowest Landau level…

cond-mat.mes-hall2016★ 123 cited

Metal-insulator transition in films of doped semiconductor nanocrystals

Ting Chen, K. V. Reich, Nicolaas J. Kramer +3

To fully deploy the potential of semiconductor nanocrystal films as low-cost electronic materials, a better understanding of the amount of dopants required to make their conductivi…

cond-mat.mes-hall2016★ 8 cited

Anomalous conductivity, Hall factor, magnetoresistance, and thermopower of accumulation layer in

Han Fu, K. V. Reich, B. I. Shklovskii

We study the low temperature conductivity of the electron accumulation layer induced by the very strong electric field at the surface of sample. Due to the strongl…

cond-mat.mes-hall2016★ 14 cited

Surface roughness scattering in multisubband accumulation layers

Han Fu, K. V. Reich, B. I. Shklovskii

Accumulation layers with very large concentrations of electrons where many subbands are filled became recently available due to ionic liquid and other new methods of gating. The lo…