10 citations · 47 across the 9 of their papers we have counts for
9 papers
Crossover From Cooper-Pair Hopping to Single-Electron Hopping in Pb(TiO) Granular Films
Zhi-Hao He, Zi-Yan Han, Kuang-Hong Gao +2
The electrical transport properties of Pb(TiO) ( being the Pb volume fraction and ranging from 0.45 to 0.69) granular films are investigated experime…
The Origin of Two-dimensional Electron Gas in ZnMgO/ZnO Heterostructures
Xiang-Hong Chen, Dong-Yu Hou, Zhi-Xin Hu +2
Although the two-dimensional electron gas (2DEG) in (001) ZnMgO/ZnO heterostructures has been discovered for about twenty years, the origin of the 2DEG is still inconcl…
High-mobility two-dimensional electron gas in -AlO/SrTiO heterostructures
Xiang-Hong Chen, Zhi-Xin Hu, Kuang-Hong Gao +1
The origin of the two-dimensional electron gas (2DEG) in the interface between -AlO (GAO) and SrTiO (STO) (GAO/STO) as well as the reason for the high mobility of th…
Disorder and magnetic field induced Bose-metal state in two-dimensional Ta(SiO) granular films
Zhi-Hao He, Hua-Yao Tu, Kuang-Hong Gao +2
The origin of the intermediate anomalous metallic state in two-dimensional superconductor materials remains enigmatic. In the present paper, we observe such a state in a series of…
Activation energy distribution of dynamical structural defects in RuO films
Sheng-Shiuan Yeh, Kuang Hong Gao, Tsung-Lin Wu +2
Ruthenium dioxide (RuO) is an important metal widely used in nanoelectronic devices. It plays indispensable roles in the applications as catalyst and supercapacitors. A good un…
Crossover of electron-electron interaction effect in Sn-doped indium oxide films
Yu-Jie Zhang, Kuang-Hong Gao, Zhi-Qing Li
We systematically study the structures and electrical transport properties of a series of Sn-doped indium oxide (ITO) films with thickness ranging from 5 to 53\,nm.…
Weak antilocalization effect of high-mobility two-dimensional electron gas in inversion layer on p-type HgCdTe
Rui Yang, Guolin Yu, Kuanghong Gao +6
Magnetoconductance of a gated two-dimensional electron gas (2DEG) in the inversion layer on p-type HgCdTe crystal is investigated. At strong magnetic fields, characteristic feature…
Weak field magnetoresistance of narrow-gap semiconductor InSb
R. Yang, K. H. Gao, Y. H. Zhang +6
The weak antilocalization effect of InSb film in perpendicular as well as tilted magnetic field is investigated. It is found that the InSb film has quasi-two-dimensional feature an…
Weak field magnetoresistance of narrow-gap semiconductors InSb
R. Yang, G. L. Yu, Yanhui Zhang +1
The magnetoresistance of InSb has been intensively investigated. The experiments we perform here focus on weak field magnetoresistance of InSb thin film. We investigate the magneto…