1 citations · 1 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2025
Accurate Modeling of Gate Leakage Currents in SiC Power MOSFETs
Ang Feng, Alexander Karl, Dominic Waldhör +3
Silicon carbide (SiC) metal-oxide-semiconductor field-effect-transistors (MOSFETs) enable high-voltage and high-temperature power conversion. Compared to Si devices, they suffer fr…
cond-mat.mtrl-sci2025★ 1 cited
Resonant states and nuclear dynamics in solid-state systems: the case of silicon-hydrogen bond dissociation
Woncheol Lee, Mark E. Turiansky, Dominic Waldhör +3
Bond breaking in the presence of highly energetic carriers is central to many important phenomena in physics and chemistry, including radiation damage, hot-carrier degradation, act…