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Wafer-Scale Epitaxy of Flexible Nitride Films with Superior Plasmonic and Superconducting Performance
Ruyi Zhang, Xinyan Li, Fanqi Meng +12
Transition-metal nitrides (e.g., TiN, ZrN, TaN) are incredible materials with excellent complementary-metal-oxide-semiconductor compatibility and remarkable performance in refracto…
Coherent epitaxy of trilayer nickelate (Nd0.8Sr0.2)4Ni3O10 films by high-pressure magnetron sputtering
Jiachang Bi, Yujuan Pei, Ruyi Zhang +6
Rare-earth (R) nickelates (such as perovskite RNiO3, trilayer R4Ni3O10, and infinite layer RNiO2) have attracted tremendous interest very recently. However, unlike widely studied R…
One-step epitaxy of high-mobility La-doped BaSnO3 films by high-pressure magnetron sputtering
Ruyi Zhang, Xinyan Li, Jiachang Bi +7
As a unique perovskite transparent oxide semiconductor, high-mobility La-doped BaSnO3 films have been successfully synthesized by molecular beam epitaxy and pulsed laser deposition…
Crystal orientation-dependent oxidation of epitaxial TiN films with tunable plasmonics
Ruyi Zhang, Qian-Ying Ma, Haigang Liu +9
Titanium nitride (TiN) is a paradigm of refractory transition metal nitrides with great potential in vast applications. Generally, the plasmonic performance of TiN can be tuned by…